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RF MOSFET Power 100 - 500 MHz
Features
l l l l l
Transistor,
2OW, 28V
UF2820P
v2.00
N-Channel Enhancement DMOS Structure Lower Capacitances Lower Noise Floor
Mode Device Operation
for Broadband
Common Source Configuration
Absolute Maximum Ratings at 25C
Parameter Symbol Rating Units
Drain-Source Voltage 1 Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature I StorageTemperature 1 Thermal Resistance I I
V05 VGS IDS PD T, TSTG I
65 20 2.8 53 200 1 -55to+150 I I
V v A W "C "C ( I
Electrical Characteristics
Parameter
at 25C
Symbol Min Max Units lest Conditions
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current GateThreshold Voltage Forward Transconductance _Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance * Per Side
Specifications
I
BV,,, `DSS `ass VGWHI GM CES Cass CRSS G. /
qD I
65 1
2.0 1 2.0
V mA , pA V S pF pF pF
I
V,,=O.O V, 1,,=4.0 mA` V,,=28.0 V, V,,=O.O V'
I I
V&20 V&O.0 V&O.0
v, v,,=o.o V' V, 1,,=200.0 mA' V, 1,,=200.0 mA, AV,,=l .O V, 80 us Pulse'
2.0 .160
6.0 14 10 4.8
V,,=28.0 V, F=l .OMHz' `.`,,=28.0 V, F=l .OMHz' V,,=28.0 V, F=l .OMHz' V,,=28.0 V, 1,,=200.0 mA. P"VI =20.0 W. F=500 MHz -.._ --~ -V,D=28.0 V, 1,,=200.0 mA, P,U,=20.0 W, F=500 MHz 1 ( V,,=28.0 V, 1,,=200.0 mA, P,,p20.0 W, FSOO MHz
10 50 -
,
-
dB
VSWR-T
% I I 1 2O:l 1 -
1
Subject to Change Without Notice.
MIA-COM,
inc.
RF MOSFET Power Transistor,
2OW, 28V
UF282OP
v2.00
Typical Broadband
Performance
Curves
POWER OUTPUT
P,,=l
30
CAPACITANCES
F=l.OMHz
12
vs VOLTAGE
vs VOLTAGE
mA F=500 MHz
.O W I,,=200
.I
5
10
15
20
25
30
10
15
25
30
35
GAIN vs FREQUENCY
V,,=28 V P,,p20 W I,,=200 mA
EFFICIENCY
I,,=200
vs FREQUENCY
mA PO520 W F=500 MHz
`O/
5aL 100 200 300 400 500 100 200 300 400
-I 500
FREQUENCY
(MHz)
FREQUENCY
(MHz)
POWER OUTPUT vs POWER INPUT
V,,=28 V I,,=200 mA
25 ,
1
J
0.05 0.10 0.20 0.40 0.60 0.60 1.00
POWER INPUT(W)
Specifications
Subject to Change Without Notice.
M/A-COM,
inc.
RF MOSFET Power Transistor,
2OW, 28V
UF282OP
v2.00
Typical Device Impedance
Frequency (MHz)
100 300 500
I I
Z,, (OHMS)
9.5 - j 60.0 5.0 - j 35.0 2.0 - i 22.0 V,,=28 V, I,,=200 mA, P,,,=20.0 Watts /
I
z LOAD (OHMS)
4.0 + j 68.0 40.0 + j 48.0 36.0 + ,i 34.0 ,I
I
Z,, is the series equivalent
input impedance
of the device from gate to gate. as measured from drain to drain.
is Z LoAD` the optimum series equivalent
load impedance
RF Test Fixture
PAR cl c2l 3, 4. 5 c6 c7 IL 12 14, 17 c9, 134 18 cl5 Cl6 Tl T2R 2B T3 u 2 3, 4, 5 go, T S LIS T
UPf
56t@f
6.8pf
Qdpf
2,OPF .01%4f
6eoPf souf mv.
O.luf 2.50' OF 50 MM <.085' DD> SEMI RIGID COAX 2.50' OF 25 OHM <.070' OD) SEMI RIGID COAX 2.W OF 50 OHM <.085' oD> SfMI RIGID COAX 14 TURNS OF NU 28 AWG ON TOROID CI3RE
Specifications
Sub!ect to Change Without Notice.
M/A-COM, Inc.

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